Y. Chen, H. Li, X. Wang, W. Zhu, W. Xu and T. Zhang, “A 130nm 1.2V/3.3V 16Kb Spin-Transfer Torque Random Access Memory with Nondestructive Self-Reference Sensing Scheme” is accepted by IEEE Journal of Solid State Circuits (JSSC) and will be published in the issue of Feb. 2012.